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Tania Roy, Ph.D.

Tania Roy, Ph.D.
Assistant Professor
Joint Appointment with NanoScience Technology Center, Materials Science & Engineering, Electrical & Computer Engineering, Physics, and ICAMR

Office: Research Pavilion, Suite 169
Phone: 407-823-2938
E-mail: Tania.Roy@ucf.edu
Website: http://nanoscience.ucf.edu/roy/

Education

  • Postdoctoral Scholar University of California, Berkeley, Department of Electrial Engineering and Computer Science (Advisor: Professor Ali Javey)
  • Postdoctoral Fellow Georgia Institute of Technology, Department of Materials Science and Engineering (Advisor: Professor Eric Vogel)
  • Ph.D. in Electrical Engineering – Vanderbilt University (Advisor: Professor Daniel Fleetwood)
  • B.E. (Hons.) in Electrical and Electronics Engineering – Birla Institute of Technology and Science, Pilani, India

Research

Dr. Roy’s research interests broadly include engineering novel functional materials to improve electronics for Internet-of-things, and development of energy-efficient devices for electronics and sensors. She is interested in developing electronic and optoelectronic devices with two-dimensional materials for low-power computing. Another aspect of her research dwells with wide bandgap semiconductors for high-power electronic applications. She is keen on studying the reliability of different materials systems and semiconductor devices.

Selected Publications

  1. T. Roy et al., “2D-2D Tunnel FETs with WSe2/SnSe2 van der Waals heterojunctions,” Appl. Phys. Lett., vol. 108, 0831111-5, 2016. (APL Editor’s Pick)
  2. P. Zhao, S. B. Desai, M. Tosun, T. Roy, H. Fang, A. B. Sachid, and A. Javey, “2D Layered Materials: From Materials Properties to Device Applications,” Intl. Electron Dev. Meeting (IEDM), 2015. (invited)
  3. T. Roy, M. Tosun, X. Cao, H. Fang, D. Lien, P. Zhao, Y. Chen, Y. Chueh, J. Guo, and A. Javey, “Dual-gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors,” ACS Nano, vol. 9, pp. 2071-9, 2015.
  4. D.-H. Lien, J. S. Kang, M. Amani, K. Chen, M. Tosun, H.-P. Wang, T. Roy, M. S. Eggleston, M. C. Wu, M. Dubey, S.-C. Lee, J.-H. He, A. Javey, "Engineering Light Outcoupling in 2D Materials", Nano Letters, vol. 15, pp. 1356-61, 2015.
  5. T. Roy, M. Tosun, J. S. Kang, A. B. Sachid, S. Desai, M. Hettick, C. C. Hu, and A. Javey, “Field-Effect Transistors Built from All Two-Dimensional Material Components,” ACS Nano, vol. 8, pp. 6259–6264, 2014. (ACS Nano Top 20 most read articles of 2014; LBL news; C&EN news; IEEE Spectrum; ACS Nano Editor’s Choice)
  6. T. Roy, L. Liu, S. de la Barrera, B. Chakrabarti, Z. R.Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, and E. M. Vogel, “Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions,”Appl. Phys. Lett., vol. 104, pp. 1235061-4, 2014.
  7. B. Chakrabarti, T. Roy, and E. M. Vogel, “Nonlinear switching with ultralow reset power in Graphene-Insulator-Graphene forming-free Resistive Memories,” IEEE Electron Dev. Lett., vol. 35, pp. 750-752, 2014.
  8. T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors”, Appl. Phys. Lett., vol. 99, no. 20, pp. 2030501-3, 2011.
  9. T. Roy, Y. S. Puzyrev, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, "Reliability-limiting defects in AlGaN/GaN HEMTs", IEEE International Reliability Physics Symposium, Monterey, CA, 10-14th April 2011.
  10. T. Roy, Y. S. Puzyrev, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, "1/f noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions", Microelectron. Reliab., vol. 51, no. 2, pp. 212-216, 2011.
  11. T. Roy, Y. S. Puzyrev, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, and S. T. Pantelides, "Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions", Appl. Phys. Lett., vol. 96, no. 13, pp. 133503-5, 2010.
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